Voltage control of ferromagnetic resonance

Voltage control of magnetism in multiferroics,where the ferromagnetism and ferroelectricity are simultaneously exhibiting,is of great importance to achieve compact,fast and energy efficient voltage controllable magnetic/microwave devices.Particularly,these devices are widely used in radar,aircraft,cell phones and satellites,where volume,response time and energy consumption is critical.Researchers realized electric field tuning of magnetic properties like magnetization,magnetic anisotropy and permeability in varied multiferroic heterostructures such as bulk,thin films and nanostructure by different magnetoelectric(ME)coupling mechanism:strain/stress,interfacial charge,spin–electromagnetic(EM)coupling and exchange coupling,etc.In this review,we focus on voltage control of ferromagnetic resonance(FMR)in multiferroics.ME coupling-induced FMR change is critical in microwave devices,where the electric field tuning of magnetic effective anisotropic field determines the tunability of the performance of microwave devices.Experimentally,FMR measurement technique is also an important method to determine the small effective magnetic field change in small amount of magnetic material precisely due to its high sensitivity and to reveal the deep science of multiferroics,especially,voltage control of magnetism in novel mechanisms like interfacial charge,spin–EM coupling and exchange coupling.