基于电学修正多晶硅纳米薄膜的压力传感器

Pressure Sensor Based on Electrically Trimmed Polysilicon Nanofilm

为了进一步提高多晶硅纳米薄膜压力传感器的性能,使用80 nm厚度的多晶硅纳米薄膜作为压力传感器的压敏电阻,设计制作了一款压力传感器。压力传感器制备封装完毕后,利用电学修正技术使多晶硅纳米薄膜压敏电阻更精确地匹配。对压力传感器的制备流程进行了完整描述,在25℃至200℃的温度范围内,测试了压力传感器的性能。压力传感器的满量程为0.6 MPa,在25℃和200℃时,灵敏度分别为22.19(mV/V)/MPa和18.30(mV/V)/MPa,在没有外界补偿的情况下,灵敏度的温度系数约为-0.10%/℃。在25℃和200℃时,失调分别是1.653 mV和1.615 mV,失调的温度系数约为-0.013%/℃。由于电学修正多晶硅纳米薄膜具有良好的压阻特性和温度稳定性,压力传感器表现出较好的性能。

In order to further improve the performance of polysilicon nanofilm pressure sensor,a pressure sensor is fabricated by utilizing 80 nm polysilicon nanofilm as piezoresistors,and electrical trimming was used to preciously match the piezoresistors.The complete fabrication process is described.From 25℃to 200℃,the properties of the pressure sensor are measured.Under the full scale pressure of 0.6 MPa,the sensitivity is 22.19(mV/V)/MPa at 25℃and 18.30(mV/V)/MPa at 200℃,the temperature coefficient of sensitivity is about-0.10%/℃without any external compensation.The offset is 1.653 mV at 25℃and 1.615 mV at 200℃,the temperature coefficient of offset is about-0.013%/℃.Because of the good piezoresistive and temperature stability characteristics of electrically trimmed polysilicon nanofilm,the pressure sensor shows better performance.