基于光电化学刻蚀的GaN微纳加工研究

Investigation of GaN micro/nano-machining based on photoelectrochemical etching

开发了自制可视化光电化学微纳加工装置,对三电极体系中GaN表面的光电化学刻蚀进行研究。在酸性电解液中,光生空穴迁移到GaN/电解液的表界面,使得GaN表面发生氧化刻蚀反应。通过倒置光学显微镜连接CCD相机实时采集样品在刻蚀过程中的动态图像,观察反应的进程。通过扫描电子显微镜(SEM)对刻蚀后GaN的表面进行了表征。研究结果表明,在0.5V的刻蚀电压下GaN表面形成了多孔纳米结构。

Photoelectrochemical etching of GaN in three electrode system is investigated using a home-made visualized photoelectrochemical micro/nano-machining equipment.In acidic electrolyte,photogenerated holes travel to the GaN/liquid interface resulting in oxidation etching reaction on the surface of GaN.The reaction process is monitored by collecting the dynamic images of the sample in real time during etching using the inverted optical microscope connected with the CCD camera.The surface of GaN after etching is characterized by scanning electron microscope(SEM).The results in this paper show that with the etching voltage of 0.5V porous nanostructures are formed on the surface of GaN.