摘要
研制了一款工作在Ku波段的大功率GaN功率放大器,功率放大器采用4个栅宽为9.6 mm的GaN高电子迁移率晶体管(HEMT)进行功率合成,总栅宽为38.4 mm。以提取的小信号S参数和大信号负载牵引结果为依据,采用ADS仿真软件进行匹配电路仿真设计。该GaN功率放大器在14.5~15.0 GHz频率范围内的输出功率(Pout)大于200 W,功率增益(Gp)大于7 d B,最高功率附加效率(ηPAE)达到43%。
A high-power GaN power amplifier operating in Ku-band has been developed. The amplifier uses four GaN high electron mobility transistors(HEMTs) with a gate width of 9.6 mm for power synthesis and a total gate width of 38.4 mm. Based on the extracted small signal S parameters and large signal load-pull measurement results, the matching circuit is simulated and designed using ADS simulation software. The GaN amplifier has an output power(Pout) greater than 200 W, a power gain(Gp) greater than 7 d B, and a maximum power added efficiency(ηPAE) of 43% in the frequency range of 14.5-15.0 GHz.
作者
苏鹏
顾黎明
唐世军
周书同
SU Peng;GU Liming;TANG Shijun;ZHOU Shutong(Nanjing Electronic Devices Institute,Nanjing 210016,China)
出处
《电子与封装》
2022年第11期58-62,共5页
Electronics & Packaging
