摘要
强激光诱导原子阈上电离中的低能结构(low-energy structure,LES)是当前强场领域的研究热点,其背后的动力学过程引起了广泛讨论.本文基于半经典模型、SCTS(semi-classical two-step)量子轨道模型和数值求解含时薛定谔方程(time-dependent Schrödinger equation,TDSE)方法,研究了中红外激光场下Xe原子阈上电离中的LES随激光脉冲宽度的依赖.发现LES随脉冲宽度的减小向更低能量方向移动.分析表明:长脉宽条件下,能谱中的多峰结构(LESn)与电子前向散射的阶次n及电子初始横向动量密切相关,而极低能结构(very-low-energy structure,VLES)主要由更高阶次前向散射的电子轨道贡献;少周期脉冲条件下,LES峰值位置随载波包络相位(carrier-envelope phase,CEP)的移动可归因于激光场矢势和离子实库仑势的共同作用随CEP的变化,其中库仑势导致的电子聚束效应是LES峰形成的主要原因.
The low-energy structure(LES)of above-threshold ionization(ATI)of atoms subjected to an intense laser field is a hot topic in the strong-field atomic physics.The rich physical insights behind LES attract a lot of attention.Based on a semi-classical model,a semi-classical two-step(SCTS)quantum trajectory model and numerical solution of the time-dependent Schrödinger equation(TDSE),we study the pulse-duration dependence of LES for Xe atom subjected to a mid-infrared laser field.It is found that the energy of LES becomes lower for shorter pulse duration.Further analysis shows that in the case of multi-cycle laser field,the LESn structure is closely related to the number of times of forward scattering and the initial transverse momentum.In the case of few-cycle laser pulse,the carrier-envelope phase(CEP)dependence of the peak position of LES is mainly due to the CEP dependence of the influence of both vector-potential of the laser field and the Coulomb potential.In addition,the bunching effect of electrons,caused by Coulomb potential,is the main reason for the formation of LES.
作者
肖智磊
全威
许松坡
柳晓军
魏政荣
陈京
Xiao Zhi-Lei;Quan Wei;Xu Song-Po;Liu Xiao-Jun;Wei Zheng-Rong;Chen Jing(Faculty of Physics,Hubei University,Wuhan 430062,China;State Key Laboratory of Magnetic Resonance and Atomic and Molecular Physics,Innovation Academy for Precision Measurement Science and Technology,Chinese Academy of Sciences,Wuhan 430071,China;Institute of Applied Physics and Computational Mathematics,Beijing 100088,China)
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2022年第23期125-133,共9页
Acta Physica Sinica
基金
国家重点研发计划(批准号:2019YFA0307700)
国家自然科学基金(批准号:11834015,11974383,12074109,12104465)
中国博士后科学基金(批准号:2022M713219)资助的课题.
关键词
阈上电离
低能结构
载波包络相位
above-threshold ionization
low-energy structure
carrier-envelope phase