磁性隧道结电阻与电流驱动相关性分析(英文)

Current-Driven Dependence of Junction Resistance-Area Product of Magnetic Tunnel Junction

利用离子束高真空复合溅射装置置备具有Ta缓冲层和Ta Fe Ta覆盖表面层的Fe Al2O3 FeCo的磁性隧道结.在零磁场下观测隧道结电导和结电阻面积积(RA)与垂直射入隧道结平面的自旋极化发射电流的依赖关系.研究发现,磁性隧道结的电导和RA的发射电流驱动效应取决于隧道结的物相成分、微结构和电流强度.在大驱动电流范围观测到电导特性不同的4个区域.

A series of Fe/Al2O3/FeCo magnetic tunnel junction(MTJ)with a Ta buffer layer and a Ta/Fe/Ta capping layer were fabricated using ionbeam sputtering technique. We examine the process that the spinpolarized electrons current which follow perpendicular to the layers and scatter from the ferromagnetic layers cause the changes of the conduction and the junction resistancearea of the MTJ in the absence of applied magnetic field. The experiments show that the currentdriven effect of a MTJ in the zero magnetic field depends on the injectingcurrent intensities into the magnetic tunnel junction. We propose that the observed changes of junction resistancearea are due to excitations of injection current with a very wide range from 0 μA to 10 000 μA.