摘要
对不同偏置下碳化硅VDMOS在总剂量辐射环境中的动态和静态特性进行了研究。比较了三种偏置状态下^(60)Coγ射线辐照对于SiC VDMOS器件静态参数(阈值电压)和动态参数(开关响应)的影响。实验结果表明,在经历一定时间的^(60)Coγ射线辐照过后,器件的各项静态参数发生了不同程度的退化,同时器件的开启延迟略微缩短,关断延迟骤增,总开关损耗增大。γ射线辐照导致器件静态特性退化的同时其动态特性也在改变,但两者退化规律具有一定的差异性。
An experimental study of the dynamic and static characteristics of SiC VDMOS under different biases in a total ionizing dose radiation environment was presented in this paper.The effects of ^(60)Coγ-ray irradiation on the static parameters(threshold voltage)and dynamic parameters(switch-ing response)of SiC VDMOS with three bias states were compared.The experimental results show that the static parameters of the device degrade to different degrees after a certain time of ^(60)Coγ-ray irradiation.At the same time,the turn-on delay time is shortened slightly,the turn-off delay time in-creases sharply,and the total switching loss increases.γ-ray irradiation degrades the static properties of the device and changes its dynamic properties at the same time,but there is a certain difference be-tween them.
作者
冯皓楠
杨圣
梁晓雯
孙静
张丹
蒲晓娟
余学峰
FENG Haonan;YANG Sheng;LIANG Xiaowen;SUN Jing;ZHANG Dan;PU Xiaojuan;YU Xuefeng(Key Laboratory of Functional Materials and Devices for Special Environments of CAS,Xinjiang Key Laboratory of Electric Information Materials and Devices,Xinjiang Technical Institute of Physics and Chemistry of CAS,Urumqi,830011,CHN;University of Chinese Academy of Sciences,Beijing,100049,CHN)
出处
《固体电子学研究与进展》
CAS
北大核心
2022年第5期412-416,共5页
Research & Progress of SSE
基金
国家自然科学基金面上项目(11975305)。
关键词
碳化硅
总剂量效应
静态参数
动态特性
silicon carbide
total ionizing dose
static parameters
dynamic characteristics
