铜原子辅助制备改进石墨烯及生长机理研究

Improved Quality Graphene Preparation Assisted by Copper Atoms and Study of Growth Mechanism

石墨烯作为一种典型的二维材料,引起人们的广泛关注.通过分子束外延(MBE)制备高质量的石墨烯仍然值得研究.采用预沉积金属原子辅助方法有利于高质量石墨烯的生长.文章利用分子束外延技术通过预沉积铜原子在碳化硅衬底上制备石墨烯,并研究不同数量预沉积铜原子对形成石墨烯的影响.在优化的预沉积时间下,获得更高质量的石墨烯.基于实验结果,进一步研究预沉积铜原子对制备改进石墨烯的生长机理.

As a typical two-dimensional material,graphene has attracted broad interest.It remains a challenge to obtain the high quality graphene especially by using Molecular Beam Epitaxy(MBE).The pre-deposition of metal atom was favorable to form continual graphene structure.In this work,by means of copper atoms assistance,gra⁃phene was prepared on silicon carbide substrate by MBE technique.The influence of copper atoms amount on gra⁃phenewasinvestigated.Interestingly,an appropriate amount of copper atoms promoted the formation of graphene and the improved quality graphene was obtained.Based on experimental observation,the growth mechanism of graphene assisted by predeposition of copper atoms was studied.