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Topological superconductivity in Janus monolayer transition metal dichalcogenides

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摘要 The Janus monolayer transition metal dichalcogenides(TMDs)MXY(M=Mo,W,etc.and X,Y=S,Se,etc.)have been successfully synthesized in recent years.The Rashba spin splitting in these compounds arises due to the breaking of out-of-plane mirror symmetry.Here we study the pairing symmetry of superconducting Janus monolayer TMDs within the weak-coupling framework near critical temperature Tc,of which the Fermi surface(FS)sheets centered around bothΓand K(K′)points.We find that the strong Rashba splitting produces two kinds of topological superconducting states which differ from that in its parent compounds.More specifically,at relatively high chemical potentials,we obtain a timereversal invariant s+f+p-wave mixed superconducting state,which is fully gapped and topologically nontrivial,i.e.,a Z_(2) topological state.On the other hand,a time-reversal symmetry breaking d+p+f-wave superconducting state appears at lower chemical potentials.This state possess a large Chern number|C|=6 at appropriate pairing strength,demonstrating its nontrivial band topology.Our results suggest the Janus monolayer TMDs to be a promising candidate for the intrinsic helical and chiral topological superconductors.
作者 李现东 余作东 陈伟鹏 龚昌德 Xian-Dong Li;Zuo-Dong Yu;Wei-Peng Chen;Chang-De Gong(National Laboratory of Solid State Microstructure,Department of Physics,Nanjing University,Nanjing 210093,China;School of Information and Electronic Engineering,Zhejiang Gongshang University,Hangzhou 310018,China;Shenzhen Institute for Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen 518055,China;Center for Statistical and Theoretical Condensed Matter Physics,Zhejiang Normal University,Jinhua 321004,China;Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China)
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第11期219-224,共6页 中国物理B(英文版)
基金 Project supported by the National Natural Science Foundation of China(Grant No.11904155)。
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