摘要
We investigate the effect of ozone(O_(3))oxidation of silicon carbide(SiC)on the flat-band voltage(Vfb)stability of SiC metal–oxide–semiconductor(MOS)capacitors.The SiC MOS capacitors are produced by O_(3)oxidation,and their Vfbstability under frequency variation,temperature variation,and bias temperature stress are evaluated.Secondary ion mass spectroscopy(SIMS),atomic force microscopy(AFM),and x-ray photoelectron spectroscopy(XPS)indicate that O_(3)oxidation can adjust the element distribution near SiC/SiO_(2)interface,improve SiC/SiO_(2)interface morphology,and inhibit the formation of near-interface defects,respectively.In addition,we elaborate the underlying mechanism through which O_(3)oxidation improves the Vfbstability of SiC MOS capacitors by using the measurement results and O_(3)oxidation kinetics.
作者
尹志鹏
尉升升
白娇
谢威威
刘兆慧
秦福文
王德君
Zhi-Peng Yin;Sheng-Sheng Wei;Jiao Bai;Wei-Wei Xie;Zhao-Hui Liu;Fu-Wen Qin;De-Jun Wang(Key Laboratory of Intelligent Control and Optimization for Industrial Equipment,Ministry of Education;School of Control Science and Engineering,Faculty of Electronic Information and Electrical Engineering,Dalian University of Technology,Dalian 116024,China;State Key Laboratory of Materials Modification by Laser,Ion,and Electron Beams(Ministry of Education),Dalian University of Technology,Dalian 116024,China)
基金
Project supported by the National Natural Science Foundation of China(Grant No.61874017)。
