掺In碲镉汞的光学和电学性能研究

Optical and Electrical Characteristics of In-doped HgCdTe

碲镉汞材料的电学、光学性能直接影响红外探测器的性能,掺杂是一种有效提高材料性能的手段,因此碲镉汞材料的相关掺杂研究至关重要。利用步进式扫描傅里叶红外调制光致发光(Fourier Transform Infrared Modulated Photoluminescence,FTIR-PL)测试仪对不同退火条件下的掺In碲镉汞材料进行了变温测试,降低了实验过程中的信噪比,获得了较好的光谱图。在此基础上结合霍尔测试结果,分析了由温度变化导致的能级位置变化以及不同退火条件处理后碲镉汞材料的发光峰强度和位置的变化。

The electrical and optical properties of narrow gap semiconductor mercury cadmium telluride materials directly affect the performance of infrared detectors.Doping is an effective means to improve the material properties,so it is very important to study the doping of mercury cadmium telluride materials.A step-scanning Fourier transform infrared modulated photoluminescence(FTIR-PL)spectrometer was used to measure the temperature change of In-doped mercury cadmium telluride in different annealing conditions.The signal-to-noise ratio(SNR)during the experiment was reduced and a better spectra was obtained.Based on the results,combining the Hall data,the change of energy level position caused by temperature change was analyzed as well as the change of luminescent peak intensity and position of mercury cadmium telluride materials after different annealing conditions.