28nm CMOS工艺8-Gbps SerDes单粒子辐射特性研究

Research on Single-Event Radiation Characteristics of an 8-Gbps SerDes in a 28nm CMOS Technology

本文研究了28 nm体硅CMOS工艺下8-Gbps通用结构高速并转串/串转并接口(Serializer/Deserializer,SerDes)的单粒子辐射特性,该SerDes由电压模发送器(Transmitter,TX)和相位插值(Phase Interpolation,PI)型接收器(Receiver,RX)组成,通过双指数电流源对整个SerDes的TX和RX进行了单粒子效应仿真,仿真结果表明该SerDes的TX和RX均会发生单粒子瞬态(Single-Event Transient,SET),且主要敏感节点包括:D触发器,采样器和时钟相位插值器.进一步采用脉冲激光对整个SerDes进行了扫描测试,测试结果验证了仿真结论.该研究为抗辐射SerDes的研制提供了重要的理论依据.

In this paper,single-event radiation characteristics of an8-Gbps high-speed Serializer/Deserializer interface(SerDes)is studied in a28nm bulk CMOS technology.The SerDes,which is composed of a voltage mode transmitter(TX)and a phase interpolating(PI)receiver(RX),is simulated by a double exponential current source to find the sensitive node,and the simulation results show both the TX and RX appear single-event transient(SET)and the main sensitive nodes of the whole SerDes include D flip-flop,samplers and clock phase interpolators.These sensitive nodes are further verified through pulsed-laser single-event experiment,and the study provides an important theoretical basis for the design of radiation-hardened SerDes.