浅述二碘硅烷的合成研究进展

Research Process of Synthesis for Diiodosilane

在大规模集成电路制程中,二碘硅烷作为硅前驱体可以在众多基材上进行气相沉积,被列为从10 nm线宽跨越到6 nm线宽制程的关键硅源物质。对二碘硅烷的制备和纯化方法进行归纳和总结,为国内高纯二碘硅烷的研发和生产提供参考,促进国内硅源前驱体的发展。

In the large-scale integrated circuit process,diiodiosilane,as a silicon precursor,can form vapor deposition on many substrates,and is listed as the key silicon source material for the process from 10 nm linewidth to 6 nm linewidth.The preparation and purification methods of diiodosilane are summarized in detail to provide reference for the production of high purity diiodosilane in China,which will improve the development of silicon source precursor.