摘要
Two-dimensional(2D)materials have been recognized as a type of potential channel material to replace silicon in future field-effect transistors(FETs)by the International Technology Roadmap for Semiconductors(ITRS)and its succesor the International Roadmap for Devices and Systems(IRDS)[1−4].Substantial first principle quantum transport simulations have predicted that many 2D transistors,including those with MoS2,WSe2,phosphorene,and Bi2O2Se channels,own excellent device performance and are able to extend Moore’s law down to the sub-10 nm scale[4].
基金
supported by the National Natural Science Foundation of China(91964101,12274002)
the Fundamental Research Funds for the Central Universities,the Fund of State Key Laboratory of Information Photonics and Optical Communications(Beijing University of Posts and Telecommunications),the Foundation of He’nan Educational Committee(23A430015)
the open research fund of National Center for International Research on Intelligent Nano-Materials and Detection Technology in Environmental Protection(SDGH2106)
the High-performance Computing Platform of Peking University and the MatCloud+high throughput materials simulation engine.
