多芯片绝缘栅双极性晶体管模块的老化键合线定位方法

Aging bonding wire positioning method of multi-chip insulated gate bipolar transistor module

对实际工况中绝缘栅双极性晶体管(insulated gate bipolar transistor,IGBT)的可靠性监测是对电力系统安全运行的重要保证。然而,采用多芯片封装方式的IGBT模块因芯片位置分布导致模块整体热量分布不均问题。针对该问题,使用多芯片封装IGBT模块,建立其包含7层结构的有限元模型,通过有限元仿真结果分析得出,模块整体温度分布不均是由于各芯片传热路径交叉所导致的热阻耦合现象。在掌握热量分布规律的基础上,研究了IGBT模块内部芯片串、并联使用时某一芯片发生键合线老化后各芯片功率损耗的变化规律,并据此提出考虑热量分布不均的键合线老化故障芯片定位方法。仿真及试验结果表明:文中提出的多芯片封装IGBT模块热分布规律具有正确性,老化键合线定位方法具有可行性。

The reliability monitoring of the insulated gate bipolar transistor(IGBT)under actual working conditions is an important guarantee for the safe operation of power system.However,for the IGBT module with multi-chip packaging,the overall heat distribution of the module will be uneven due to the chip position distribution.According to the problem,the finite element model with seven layer structure using the multi-chip packaged IGBT module is established.Through the analyses of the finite element simulation results,it is concluded that the uneven temperature distribution of the module is the thermal resistance coupling phenomenon caused by the intersection of heat transfer paths of each chip.On the basis of mastering the law of heat distribution,this paper studies the change law of power loss of each chip after bonding wire aging of a chip when chips in the IGBT module are used in series and parallel,and puts forward a chip location method considering uneven heat distribution.The simulation and experimental results show that the thermal characteristic theory of the multi-chip packaged IGBT module proposed in this paper is correct and the aging bonding line positioning method is feasible.