摘要
基于在30μm厚的GaAs衬底上开发的平面肖特基二极管,设计了220 GHz GaAs单片集成分谐波混频器。考虑了二极管外形结构对电磁波传输的影响,采用场路结合联合仿真的经典方法建立二极管模型来仿真其电性能,并利用这一模型在非线性电路仿真软件中对混频器的性能进行仿真和优化。制作的220 GHz分谐波混频器模块在本振频率为110 GHz、输入功率为6 dBm的条件下进行测试。结果表明,在射频频率210~220 GHz内,混频器模块的单边带变频损耗小于11 dB,在220 GHz处具有最小变频损耗,为7.2 dB。
Based on the developed planar Schottky diodes fabricated on a 30μm thick GaAs substrate,a 220 GHz GaAs monolithic integrated sub-harmonic mixer was designed.Considering the influence of the diode outer structure on the electromagnetic wave transmission,the diode model was established to simulate electrical performances by the classical method of field-circuit combined co-simulation,and the model was used to simulate and optimize performances of the mixer in the nonlinear circuit simulation software.The fabricated 220 GHz sub-harmonic mixer module was tested under the condition of the local oscillator frequency of 110 GHz with the input power of 6 dBm.The results show that the single-sideband conversion loss of the mixer module is less than 11 dB in the RF frequency range of 210-220 GHz,and the minimum conversion loss is 7.2 dB at 220 GHz.
作者
杨大宝
赵向阳
刘波
邢东
冯志红
Yang Dabao;Zhao Xiangyang;Liu Bo;Xing Dong;Feng Zhihong(The 13^(th)Research Insilute,CETC,Shjiazhuang 050051,China;Science and Technology on ASIC Laboratory,Shjiazhuang 050051,China)
出处
《半导体技术》
CAS
北大核心
2022年第11期886-890,共5页
Semiconductor Technology
关键词
单片集成电路
分谐波混频器
肖特基二极管
建模
变频损耗
monolithic integrated circuit
sub-harmonic mixer
Schottky diode
modeling
conversion loss
