期刊文献+

Effect of Cu/Zn Substitution in MgO Nanostructures for Tuning the Optical Bandgap and Structural Properties

下载PDF
导出
摘要 Low cost co-precipitation method was used to synthesize Cu(0-0.05)doped MgO samples with fixed concertation of Zn=0.01.X-ray diffraction(XRD)spectra confirmed the phase purity of the samples for 0≤Cu≤0.03 doping concentration.The secondary phase for 0.04≤Cu≤0.05 exhibited the formation of mixed metal oxides.The crystallite size was found to increase from 17.5 to 23.5 nm for 0≤Cu≤0.03 and then decreased from 22 to 18.5 nm for 0.04≤Cu≤0.05.The estimated bandgap first reduced from 5.48 to 4.88 eV and then increased from 5.21 to 5.36 eV.The morphology of the samples transformed from spheroidal shape to star-like shape.The obtained results reveal that the structural and optical property are in good agreement with the morphological transition.The peak shifting towards the lower values of vibrational frequency from 694 to 579 cm^(-1) confirms the incorporation of Cu/Zn in Mg-O lattice.The tuning of optical bandgap and structural properties with varying dopant concentration in MgO nanomaterials can be used for multifunctional modern energy storage and optoelectronic devices.
出处 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2022年第6期1035-1040,共6页 武汉理工大学学报(材料科学英文版)
  • 相关文献

参考文献1

二级参考文献20

  • 1T T Sold, Y Hatanaka, D C Look. ZnO Diode Fabricated by Excimer- Laser Doping[J]. AppL Phys. Lett., 2000, 76:3 257-3 258.
  • 2D C Look, B Claflin, Y I Alivov, et aL The Future of ZnO Light Emitters[J]. Phys. Status SolidA, 2004, 201:2 203-2 212.
  • 3B J Coppa, R F Davis, R J Nemanich. Gold Schottky Contacts on Oxygen Plasma-treated, n-type ZnO(0001)[J]. AppL Phys. Lett., 2003, 82( 400 ): 1 536 -264.
  • 4Van de Walle C G. Hydrogen as a Cause of Doping in Zinc Oxide[J]. Phys. Rev. Lett., 2000, 85:1 012-1 015.
  • 5S B Zhang, S H Wei, A Zunger. Intrinsic n-type Versus p-type Doping Asymmetry and the Defect Physics of ZnO[J]. Phys. Rev. B, 2001, 63: 075 205.
  • 6C H Park, S B Zhang, S H Wei. Origin of p-type Doping Difficulty in ZnO: The Impurity Perspective[J]. Phys. Re: B, 2002, 66:073- 202.
  • 7F K Shan, G X Liu, W J Lee, et al. The Role of Oxygen Vacancies in Epitaxial-deposited ZnO Thin Films[J]. J. Appl. Phys., 2007, 053 106 (101): 2 437 122.
  • 8F X Xiu, Z Yang, L J Mandalapu, et al. P-type ZnO Films with Solid Source Phosphorus Doping by Molecular-beam Epitaxy[J]. Appl. Phys. Left., 2006, 052 106 (88) : 2 170 406.
  • 9D C Look, G M Renlund, R H Burgener, et al. As-droped p-typo ZnO Produced by an Evaporation/sputtering Process[ J]. Appl. Phys. Lett., 2004, 5 269 (85) : 1 825 615.
  • 10L J Mandalapu, F X Xiu, Z Yang, et al. P-type Behavior from Sb-doped ZnO Heterojunction Photodiodes[J]. Appl. Phys. Left., 2006, 112 108 (88): 2 186 516.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部