摘要
We have obtained vertically aligned ZnO nanowire arrays synthesized by microwave-assisted heating method with different growth time.From the room-temperature PL measurement,the strong deep-level emission and weak near band edge(NBE)emission can be seen.The deep-level emissions became weaker and deep-level emissions became stronger when the samples were annealed at 300℃for 30 min,meanwhile,the NBE emission peaks get red-shifted with growth time,and the longer the growth time,the more the peak shifting.This phenomenon can be attributed that the diameter of ZnO nanowires increases with growth time.This PL emission phenomenon is important in research of optoelectronic application.
作者
刘利清
LI Yongtao
HE Xuemin
ZHANG Hongguang
SHEN Jianping
LIU Liqing;LI Yongtao;HE Xuemin;ZHANG Hongguang;SHEN Jianping(New Energy Technology Engineering Laboratory of Jiangsu Province&School of Science,Nanjing University of Posts and Telecommunications(NJUPT),Nanjing 210023,China;College of Electronic and Optical Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China)
基金
by the National Natural Science Foundation of China(Nos.61874058 and 51861145301)
the Nanjing University of Posts and Telecommunications under Research Projects(Nos.NY220036 and NY217096)
the Nanjing University of Posts and Telecommunications Foundation(Nos.JUH219002 and JUH219007)。
