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Effects of Sm Doping to Improve the Thermoelectric Properties of ZnO Ceramics

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摘要 A series of Sm doped ZnO based thermoelectric materials were prepared by mechanical alloying and spark plasma sintering.The effects of Sm doping on ZnO based thermoelectric materials were systematically studied by means of electrical and thermal properties tests combined with first principles calculations of energy band,density of states and elastic constants.The experimental results show that the substitution of Sm at Zn site could cause the valence band and conduction band moving down,and the 4f orbitals of Sm could contribute to the increase of the density of states near the Fermi level,corresponding to the increase of carrier concentration and electrical conductivity.The substitution of Sm at Zn site could cause the decrease of effective mass and Seebeck coefficient.The substitution of Sm at Zn site could lead to the decrease of Young's modulus and lattice thermal conductivity,which contribute to the decrease of thermal conductivity.Finally,the highest dimensionless thermoelectric figure of merit(ZT)value has been increased to 0.346,which is 3.48 times as pristine ZnO.
作者 FENG Bo MAO Wentao 冯波;MAO Wentao(School of Mechanical and Electrical Engineering,Wuhan Donghu University,Wuhan 430070,China;Institute of Engineering and Technology,Hubei University of Science and Technology,Xianning 437100,China)
出处 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2022年第6期1166-1171,共6页 武汉理工大学学报(材料科学英文版)
基金 by the Natural Science Foundation of Hubei Province(2021CFB009) the Guiding Project of Hubei Province in 2022 and the School Youth Fund of Wuhan Donghu University。
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