摘要
为了能够得到高质量的薄膜,降低实验成本,通过化学气相沉积(CVD)方法以GaTe粉作为Ga源在云母衬底上合成了β-Ga_(2)O_(3)薄膜。通过改变生长温度、载气和生长时间得到高结晶质量的β-Ga_(2)O_(3)薄膜,并通过X射线衍射(XRD)和拉曼光谱进行证实。XRD结果显示,薄膜的最佳生长温度为750℃。对比不同载气下合成的β-Ga_(2)O_(3)薄膜可知,Ar气是生长薄膜材料的最佳环境。为了实现高结晶质量的β-Ga_(2)O_(3)薄膜,在Ar气环境下改变薄膜的生长时间,XRD结果发现,生长时间20 min的薄膜具有高结晶质量。最后,将其转移到300 nm厚氧化层的Si/SiO_(2)衬底上,并通过原子力显微镜测试,证实了16 nm厚的二维Ga_(2)O_(3)薄膜。
In order to obtain highquality films and reduce experimental costs,β-Ga_(2)O_(3) films were synthesized on mica substrates by chemical vapor deposition using GaTe powder as the Ga source.High crystalline qualityβGa_(2)O_(3) thin films were obtained by changing the growth temperature,buffer gas,and growth time,which were confirmed by Xray diffraction(XRD)and Raman spectroscopy.XRD results showed that the optimal growth temperature of the film was 750℃.A comparison ofβGa_(2)O_(3) films synthesized under different buffer gases revealed Ar to be the best environment for growing film materials.The growth time of the thin films was changed under an Ar atmosphere to achieveβ-Ga_(2)O_(3) thin films with high crystalline quality.XRD results showed that the thin film with a growth time of 20 min had high crystalline quality.Finally,it was transferred to a Si/SiO_(2) substrate with a 300 nm thick oxide layer and tested by atomic force microscopy to obtain a 16 nm thick twodimensional Ga_(2)O_(3) film.
作者
李星晨
林逢源
贾慧民
亢玉彬
石永吉
孟兵恒
房丹
唐吉龙
王登魁
李科学
楚学影
魏志鹏
Li Xingchen;Lin Fengyuan;Jia Huimin;Kang Yubin;Shi Yongji;Meng Bingheng;Fang Dan;Tang Jilong;Wang Dengkui;Li Kexue;Chu Xueying;Wei Zhipeng(State Key Laboratory of High Power Seminconductor Laser,College of Science,Changchun University of Science and Technology,Changchun130022,Jinlin,China)
出处
《激光与光电子学进展》
CSCD
北大核心
2022年第19期393-399,共7页
Laser & Optoelectronics Progress
基金
国家自然科学基金(61674021,11674038,61704011,61904017,62074018,12074045)
吉林省科技发展项目(20200301052RQ)
吉林省教育厅项目(JJKH20200763KJ)
长春理工大学青年基金项目(XQNJJ2018-18)。
