摘要
We report a significantly enhanced anomalous Hall effect(AHE)of Pt on antiferromagnetic insulator thin film(3-unit-cell La_(0.7)Sr_(0.3)MnO_(3),abbreviated as LSMO),which is one order of magnitude larger than that of Pt on other ferromagnetic(e.g.Y_(3)Fe_(5)O_(12))and antiferromagnetic(e.g.Cr_(2)O_(3))insulator thin films.Our experiments demonstrate that the antiferromagnetic La_(0.7)Sr_(0.3)MnO_(3)with fully compensated surface suppresses the positive anomalous Hall resistivity induced by the magnetic proximity effect and facilitates the negative anomalous Hall resistivity induced by the spin Hall effect.By changing the substrate’s temperature during Pt deposition,we observed that the diffusion of Mn atoms into Pt layer can further enhance the AHE.The anomalous Hall resistivity increases with increasing temperature and persists even well above the Neel temperature(T_(N))of LSMO.The Monte Carlo simulations manifest that the unusual rise of anomalous Hall resistivity above T_(N)originates from the thermal induced magnetization in the antiferromagnetic insulator.
基金
supported by the National Key Research Program of China(Grant No.2020YFA0309100)
the National Natural Science Foundation of China(Grant Nos.11991062,12074075,12074073,12074071,and 11904052)
the Shanghai Municipal Science and Technology Major Project(Grant No.2019SHZDZX01)
the Shanghai Municipal Natural Science Foundation(Grant Nos.20501130600,22ZR1407400,and 22ZR1408100).
