碳化镍薄膜的制备及其作为石墨烯制备中间相的研究进展

Research Progress on the Preparation of Nickel Carbide Films and Nickel Carbide as Intermediate Phases of Preparation of Graphene

碳化镍薄膜具有良好的催化活性、低电阻率、高的硬度以及可以作为石墨烯制备过程中的理想中间体等特点引起了人们的广泛关注。物理气相沉积技术制备的碳化镍薄膜多是微晶相嵌入碳基体中的复合结构薄膜,然而,通过化学气相沉积技术制备的薄膜是均匀相薄膜,电阻率低、电催化活性较好。此外,在高质量石墨烯的制备方面,碳化镍相起到提供碳源作用。本文从物理溅射技术、化学气相沉积技术和原子层沉积技术综述了碳化镍薄膜的制备方法,并且总结了碳化镍中间相对石墨烯形成的影响。

Nickel carbide films have attracted extensive attention due to their unique properties, such as good catalytic activity, low resistivity, and high hardness. Moreover nickel carbide can be an ideal intermediate for graphene preparation. Nickel carbide films prepared by physical vapor deposition technology are mostly composite structure films with nanocrystals embedded in a carbon matrix. However, the films deposited by the chemical vapor deposition technique are homogeneous structures with low resistivity and good electrocatalytic activity. In addition,nickel carbides play an important role in the formation of high-quality graphene since they can be used as the carbon source. In this paper, the preparation methods of nickel carbides are reviewed, including physical sputtering,chemical vapor deposition and atomic layer deposition technology. The effect of the nickel carbide intermediate phase on the formation of graphene has also been summarized.