分子束外延高铟组分InGaAs薄膜研究

Study on Molecular Beam Epitaxy of High indium InGaAs Films

研究了分子束外延生长条件对高铟组分InGaAs材料性能的影响,分析了生长温度、Ⅴ/Ⅲ比和As分子束形态对In_(0.74)Ga_(0.26)As材料光致发光和X射线衍射峰强度、本底载流子浓度和迁移率的影响。测试结果表明:适中的生长温度和Ⅴ/Ⅲ比可以提高材料晶格质量,减少非辐射复合,降低本底杂质浓度。As分子束为As_(2)时In_(0.74)Ga_(0.26)As材料质量优于As4分子束。当生长温度为570℃,As分子束形态为As2,V/III比为18时,可以获得较高的光致发光和X射线衍射峰强度,室温和77 K下的本底载流子浓度分别达到6.3×10^(14)cm^(-3)和4.0×10^(14)cm^(-3),迁移率分别达到13400cm^(2)/Vs和45160 cm^(2)/Vs。

The effects of molecular beam epitaxy growth parameters on the properties of high indium InGaAs materials have been investigated in this paper.The growth temperature,Ⅴ/Ⅲratio and arsenic dimer of In_(0.74)Ga_(0.26)As materials were investigated and adjusted to optimize the peak intensity of the photo luminescence and X-ray diffraction measure‐ments,as well as background carrier concentration and mobility.Results show that moderate growth temperatures andⅤ/Ⅲratios are needed for the growth to improve the lattice quality,reduce the non-radiation recombination and decrease the background impurity concentration.The In_(0.74)Ga_(0.26)As materials grown using As2dimer show better material quality than those using As4dimer.For the material grown at 570℃,As_(2)dimer andⅤ/Ⅲratio of 18,relatively strong photo luminescence and X-ray diffraction peak intensity have been achieved.At room temperature and 77 K,the background carrier concentrations were 6.3×10^(14)cm^(-3)and 4.0×10^(14)cm^(-3),while the mobilities were 13400 cm^(2)/Vs and 45160 cm^(2)/Vs,respectively.