碲镉汞线列光导器件的失效模式及原因分析

Failure modes and analysis for HgCdTe linear photoconductive detectors

针对不同项目研制过程中碲镉汞线列光导器件在筛选测试和应用中出现的失效模式进行了归纳和总结,并综合碲镉汞材料参数、器件结构尺寸、器件物理、器件制备工艺和器件测试等几个方面因素对器件失效的可能原因进行了分析,首次提出碲镉汞线列光导器件的优值因子作为失效判据,为进一步理解碲镉汞线列光导器件的物理机理以及更好优化器件的筛选过程提供了参考,为碲镉汞线列光导器件应用中出现的失效问题提供了分析和解决的方向。

Failure modes during screening tests and application processes have been summed up for HgCdTe linear photoconductive detectors which have been applied in several programs.The mechanisms behand these failure modes have been analyzed based on the combination of HgCdTe material parameters,device structure dimensions,detector physics,fabrication processes and device test techniques.Criteria of failure modes have been firstly proposed for deeper understanding of HgCdTe linear photoconductive detector and better optimization of detector screening process,which are also helpful for the analysis and resolution of problems encountered in the application of HgCdTe linear photoconductive detectors.