基于90 nm InP HEMT工艺的220 GHz功率放大器设计

Design of 220 GHz power amplifier based on 90 nm InP HEMT process

基于90 nm InP HEMT工艺,设计了一款220 GHz功率放大器太赫兹单片集成电路,该放大器采用片上威尔金森功分器结构实现了两路五级共源放大器的功率合成。在片测试结果表明,200~230 GHz频率范围内,功率放大器小信号增益平均值18 dB。频率为210~230 GHz范围内该MMIC放大器饱和输出功率优于15.8 mW,在223 GHz时最高输出功率达到20.9 mW,放大器芯片尺寸为2.18 mm×2.40 mm。

Based on the 90 nm InP HEMT process,a 220 GHz power amplifier terahertz integrated circuit design(TMIC)is designed.The amplifier adopts the on-chip Wilkinson power divider structure to realize the power synthesis of two-way five stage common-source amplifiers.The on-wafer measurement results show that the average small signal gain of the power amplifier is 18 dB.The power test results show that the saturated output power of the power amplifier is better than 15.8 mW from 210 GHz to 230 GHz,with a maximum output power of 20.9 mW at 223 GHz.The size of the TMIC chip is 2.18 mm×2.40 mm.