SiO_(2)/CeF_(3)复合薄膜的电致发光

Electroluminescence of SiO_(2)/CeF_(3) Composite Films

采用真空电子束蒸发气相沉积技术在重掺杂n型硅衬底上制备了SiO_(2)/CeF_(3)复合薄膜电致发光器件。对器件中各膜层的微观结构和成分进行了表征,并研究了器件的电致发光特性。结果表明:器件在正反接时的电致发光光谱存在明显差异,相应的伏安特性曲线不对称。器件正接时,电致发光光谱在504 nm(绿光区)处和680 nm(红光区)处各出现一个发光峰;反接时,电致发光光谱除了在684 nm(红光区)处出现一个较弱的发光峰外,在434 nm处还出现了一个很强的蓝色发光峰。

SiO_(2)/CeF_(3)composite films for electroluminescent devices was fabricated on heavily doped n-type silicon substrates using vacuum electron beam evaporation vapor deposition. The microstructure and composition of each film layer in the device were characterized, and the electroluminescence(EL) characteristics of the devices were also studied. The experimental results show that the device can emit light in both forward and reverse connection. But, there are obvious differences in the EL spectra when the device is in forward and reverse connection, and the corresponding current-voltage characteristics curve of the device is asymmetrical. When the device is in forward connection, the EL peaks are located at 504 nm(green light region) and 680 nm(red light region). When the device is in reverse connection, in addition to a weak EL peak at 684 nm(red light region), there is also a strong blue EL peak located at 434 nm.