超低介PTFE基介质基板配方设计及基板性能

Formulation design and properties of ultra-low PTFE dielectric substrates

针对超低介PTFE基介质基板配方工艺不稳定、基板介电常数高等问题,提出不同直径、不同铝硅原子比和不同填加比例空心球对基板介电性能等因素的影响探究方案。对不同直径和不同球壳厚度空心球对介电常数的影响进行了模拟,基于模拟结果进行了PTFE基空心球复合介质基板的制备,并对相关性能进行测试。实验结果显示:当空心球直径为80μm、球壳厚度为2.5μm、铝硅原子比为2∶1、填加比例为35%时,制备的基板介电常数为2.0,介质损耗为0.0027,Z轴热膨胀系数为38.8×10^(-6)/℃,吸水率为0.025%,为性能优良的超低介PTFE基复合介质基板材料。

In order to solve the problems of unstable formulation of ultra-low PTFE-based dielectric substrates and a high dielectric constant of substrates,this paper proposes a scheme for the influence of different factors on things like dielectric properties of substrates,including diameters,atomic ratios of aluminum to silicon and filling ratios of hollow spheres.The influence of hollow spheres of different diameters and shell thickness on the dielectric constant is simulated.Based on the simulation results,composite dielectric substrates of PTFE-based hollow spheres are produced,and the related performance is tested.When the diameter of a hollow sphere is 80μm,the thickness of the spherical shell is 2.5μm,the atomic ratio of aluminum to silicon is 2∶1,and the filling ratio is 35%,the dielectric constant of the produced substrate is 2.0,the dielectric loss is 0.0027,the thermal expansion coefficient of Z axis is 38.8×10^(-6)/℃,and the water absorption is 0.025%,being an ultra-low PTFE-based composite dielectric substrate with excellent performance.