氧化镓材料与功率器件的研究进展

Progress of Gallium Oxide Materials and Power Devices

氧化镓(Ga_(2)O_(3))以其禁带宽度大、击穿场强高、抗辐射能力强等优势,有望成为未来半导体电力电子领域的主力军。相比于目前常见的宽禁带半导体SiC和GaN,Ga_(2)O_(3)的Baliga品质因数更大、预期生长成本更低,在高压、大功率、高效率、小体积电子器件方面更具潜力。对Ga_(2)O_(3)外延材料、功率二极管和功率晶体管的国内外最新研究进行了概括总结,展望了Ga_(2)O_(3)在未来的应用与发展前景。

Gallium oxide(Ga_(2)O_(3))is expected to become the main force in the future semiconductor power electronics field with its advantages of large forbidden band width,high breakdown field strength and strong radiation resistance.Compared with the common wide band gap semiconductor SiC and GaN,Ga_(2)O_(3)has advantages of superior Baliga’s figure of merit and lower cost in growth,and more potential for high voltage,high power,high efficiency,and small size electronic devices.The latest domestic and international research on Ga_(2)O_(3)epitaxial materials,power diodes and power transistors is summarized,and the future applications and development prospects of Ga_(2)O_(3)are anticipated.