高压SiC MOSFET研究现状与展望

Status and Prospect of High-Voltage SiC MOSFET

碳化硅(SiC)金属氧化物半导体场效应晶体管(MOSFET)作为宽禁带半导体单极型功率器件,具有频率高、耐压高、效率高等优势,在高压应用领域需求广泛,具有巨大的研究价值。回顾了高压SiC MOSFET器件的发展历程和前沿技术进展,总结了进一步提高器件品质因数的元胞优化结构,介绍了针对高压器件的几种终端结构及其发展现状,对高压SiC MOSFET器件存在的瓶颈和挑战进行了讨论。

Silicon carbide(SiC)metal oxide semiconductor field effect transistor(MOSFET)as a wide band semiconductor unipolar power devices,with high frequency,high withstand voltage,high efficiency,high demand in high-voltage applications,has great research value.The development history and latest technology progress of high-voltage SiC MOSFET devices are reviewed,cell optimization structures to further improve the device quality factor are summarized,several edge termination structures for high-voltage devices and their development status are introduced,and limits and challenges of high-voltage SiC MOSFET devices are discussed.