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基于负载牵引的S波段130 W硅LDMOS功率放大器研制

Design of an S-Band 130 W Silicon LDMOS Power Amplifier Based on Load-Pull
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摘要 研制了具有高频、高增益特性的硅LDMOS芯片,利用切比雪夫变换电路设计了5Ω及10Ω的2套负载牵引夹具。采用大功率负载牵引测试技术进行了阻抗提取,完成了功率管内匹配及预匹配电路的设计,设计出一款工作频带为2.7~3.1 GHz的LDMOS宽带功率放大器。测试结果表明,放大器在32 V工作电压、100μs脉宽、10%占空比的工作条件下,输出功率大于130 W,增益超过12.5 dB,漏极效率达到46%以上。 A kind of silicon LDMOS chip with high frequency and high gain is developed.Two sets of load-pull clamps of 5Ωand 10Ωare designed through Chebyshev transform circuits.The impedance is extracted by the high-power load-pull test technology,the design of in-tube matching circuit and pre-matching circuit is completed,and a wide band LDMOS power amplifier of 2.7-3.1 GHz is designed.The test results show that the amplifier achieves the output power more than 130 W,the gain more than 12.5 dB,and the drain efficiency more than 46%under 32 V operating voltage,100μs pulse width and 10%duty cycle.
作者 鞠久贵 成爱强 JU Jiugui;CHENG Aiqiang(China Electronics Technology Group Corporation No.55 Research Institute,Nanjing 210016,China)
出处 《电子与封装》 2023年第1期121-125,共5页 Electronics & Packaging
关键词 LDMOS S波段 负载牵引 预匹配 ADS仿真 LDMOS S-band load-pull pre-matching ADS simulation
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  • 1林强,张祖荫,郭伟.微波功率放大器非线性失真分析[J].微波学报,2004,20(4):79-82. 被引量:18
  • 2黄江,余振坤.UHF高功率固态雷达发射机[J].现代雷达,2006,28(3):79-83. 被引量:5
  • 3黄江,王卫华.新型的功率器件——射频LDMOS[J].微波学报,2006,22(3):48-51. 被引量:13
  • 4Lars Vestling.Silicon RF transistors II:LDMOS[R].Uppsala University,Sweden,2006.
  • 5Ishikawa,Yamada H,Esaki H.A 2.45 GHz power LD-MOSFET with reduced source inductance by V-groove connections[C].IEDM,1985:166-169.
  • 6Wood A,Dragon C,Burger W.High performance silicon LDMOS technology for 2GHz RF power amplifier applications[C].IEDM Tech Digest,1996:87-90.
  • 7王佃利,李相光,刘洪军,等.硅微波LDMOS功率器件研制[C].IC-china 2005 &-Beijing International Microelectronics Symposium Album,2005:237-240.
  • 8Maanane H, Bertram P, Marcon J, et al. Reliability study of power RF LDMOS for rader application[J]. Microelectronics Reliability, 2004,44 : 1449-1454.
  • 9Malay Trivedi, Pankaj Khandelwal, Krishna Shenai. Performance modeling of RF power MOSFET' s[J]. IEEE Electron Devices, 1999,46 (8) : 1794-1802.
  • 10Ishikawa O, Yamada H, Esaki H. A 2.45 GHz power LD-MOSFET with reduced source inductance by V- groove connections[C]. IEDM, 1985 : 166-169.

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