等离子体净化工艺对覆膜阴极性能的影响

Effect of Plasma Purification on the Performance of M-Type Cathodes

覆膜阴极因其优异的性能在很多领域具有广泛的应用。本文介绍了覆锇膜阴极预处理过程中增加气体辉光放电环节,实现等离子体净化阴极表面的工艺。通过二极管形式测试,发现等离子体净化使得覆锇膜阴极电子发射性能有大幅提升,对比了不同气体类型和放电时长的处理对阴极发射改善的差异,结果表明,氙气放电持续20 min可以达到较好的净化效果,继续增加放电时间发射提升不明显。本研究为真空电子器件的洁净制备提供了参考依据。

M-type cathodes have been widely used in many fields because of their excellent performance.The surface plasma purification process of Os film cathodes by adding gas glow discharge in pretreatment is introduced.It is found that the plasma purification greatly improves the emission performance of the Os film cathodes measured in diodes.The emission improvements of the cathodes purified with different gas and discharge duration are compared.The result shows that a 20 min xenon discharge process can achieve good cleaning effect,and further increase of discharge duration does not improve the emission more obviously.This research provides reference for clean preparation of vacuum electronic devices.