摘要
The burgeoning two-dimensional(2D)layered materials provide a powerful strategy to realize efficient light-emitting devices.Among them,gallium telluride(Ga Te)nanoflakes,showing strong photoluminescence(PL)emission from multilayer to bulk crystal,relax the stringent fabrication requirements of nanodevices.However,detailed knowledge on the optical properties of Ga Te varies as layer thickness is still missing.Here we perform thickness-dependent PL and Raman spectra,as well as temperature-dependent PL spectra of Ga Te nanoflakes.Spectral analysis reveals a spectroscopic signature for the coexistence of both the monoclinic and hexagonal phases in Ga Te nanoflakes.To understand the experimental results,we propose a crystal structure where the hexagonal phase is on the top and bottom of nanoflakes while the monoclinic phase is in the middle of the nanoflakes.On the basis of temperature-dependent PL spectra,the optical gap of the hexagonal phase is determined to be 1.849 eV,which can only survive under temperature higher than 200 K with the increasing phonon population.Furthermore,the strength of exciton-phonon interaction of the hexagonal phase is estimated to be 1.24 me V/K.Our results prove the coexistence of dual crystalline phases in multilayer Ga Te nanoflakes,which may provoke further exploration of phase transformation in Ga Te materials,as well as new applications in 2D light-emitting diodes and heterostructure-based optoelectronics.
基金
supported by the National Natural Science Foundation of China(No.91950109 and 61875109)
the Natural Science Foundation of Shanxi Province(No.201901D111010(ZD))
Postgraduate Education Innovation Project of Shanxi Province(No.2019SY052 and No.2020BY022)。
