基于阱式阶梯电子阻挡层的深紫外激光二极管性能研究

Performance of deep ultraviolet laser diode based on well-type ladder electron barrier

为有效降低深紫外激光二极管(DUV-LD)在有源区的电子泄露,提出了一种阱式阶梯电子阻挡层(EBL)结构。利用Crosslight软件对矩形、阶梯形和阱式阶梯形三种不同的结构分别进行了仿真研究,详细对比分析了三种结构器件的能带图、辐射复合率、电子空穴浓度、P−I以及V−I特性等,结果表明阱式阶梯EBL对电子的泄露抑制效果最好,从而使得器件的光学和电学性能得到优化。

In order to effectively reduce the electron leakage of deep ultraviolet laser diode(DUV-LD)in the active region,a well-type ladder electron blocking layer(EBL)structure is proposed.Crosslight software is used to simulate three different structures of EBLs,namely,rectangle type,ladder type and well-type,respectively,and the energy band diagram,radiation recombination rate,electron hole concentration,P-I and V-I characteristics of the three structure devices are compared and analyzed in detail.It is found that the well-type ladder EBL has the best suppression effect on the leakage of electrons,leading to the improved optical and electrical properties of the DUV-LD device.