摘要
The research and development(R&D)in silicon or III/V photonics are booming and emerging as the mainstream platforms for large-scale photonic integration circuits,which offer the well-established advantages of scalable chip-wise integration with low cost at high volume and high yield,following the standard complementary metal oxide semiconductor fabrication processes in the microelectronics industry.However,the co-integration of electronics with photonics is critical for fully exploiting the high bandwidth,reducing power consumption,as well as achieving more compact footprint and lower cost.Optoelectronic devices with novel co-integration schemes and new materials with further improved functionalities are urgently needed to push beyond the limitations posed by the intrinsic material capabilities and speed restrictions at the electro-optical interfaces.Recently,considerable breakthroughs revived our understanding of these fields,providing both opportunities and challenges in this exciting area.
