钙钛矿忆阻器的开关特性实验研究

Study of Switch Performances of Perovskite Memristor

卤化物钙钛矿(ABX3)材料由于其离子迁移和电荷俘获效应,在忆阻器材料中具有很强的应用潜力。Cs0.05(FA0.85MA0.15)0.95Pb I2.55Br0.4由于生成能低、铅和碘原子之间结合强度弱,碘离子很容易从钙钛矿晶格中丢失,产生缺陷和不饱和的铅原子。太阳能电池领域研究表明,通过引入碘三离子,可以明显减少钙钛矿薄膜中的缺陷,显著提高薄膜质量。因此通过向钙钛矿前驱体溶液中加入不同量的碘单质,引入碘三离子来探究其对于由Cs0.05(FA0.85M A0.15)0.95Pb I2.55Br0.4组成的钙钛矿忆阻器的影响。实验结果表明:通过加入不同量的碘单质,忆阻曲线出现了三种较为明显的变化:I-V曲线中电流呈现逐渐下降的趋势;忆阻器SET与RESET的突变特性发生明显改变;忆阻器开关比变化较大。通过研究引入碘三离子对钙钛矿忆阻器的影响,为调节钙钛矿忆阻器电流与开关比,以适用于不同应用领域,同时为未来钙钛矿忆阻器忆阻性能的提高提供了方向。

Halide perovskite(ABX3)materials have strong application potential in memristor materials due to their ion migration and charge trapping effects.Due to the low formation energy and weak binding strength between lead and iodine atoms in Cs0.05(FA0.85MA0.15)0.95Pb I2.55Br0.4,iodine ions are easily lost from the perovskite lattice,resulting in defects and unsaturated lead atoms.Research on the field of solar cells has shown that by introducing triiodide ions,the defects in perovskite films can be significantly reduced and the film quality can be significantly improved.Therefore,different amounts of iodine are added to the perovskite precursor solution to introduce triiodide ions to explore its effect on the perovskite memristor being composed of Cs0.05(FA0.85MA0.15)0.95Pb I2.55Br0.4.Experimental results show that by adding different amounts of iodine,the memristor curve has three obvious changes,such as the current in the I-V curve shows a gradually decreasing trend,the mutation performances of the memristor SET and RESET change significantly,the switch ratio varies greatly.The influence of the introduction of triiodide ion on the perovskite memristor is studied to adjust the current and switch ratio of the perovskite memristor,so as to be suitable for different application fields,and provide a direction for improving the performances of the perovskite memristor in the future.