摘要
The shelf-stability issue,originating from the ZnO-induced positive aging effect,poses a significant challenge to industrializing the display technology based on solution-processed quantum-dot light-emitting diodes(QLEDs).Currently,none of the proposed solutions can simultaneously inhibit exciton quenching caused by the ZnO-based electron-transporting layer(ETL)and retain other advantages of ZnO.Here in this work,we propose a bilayer design of ETL in which a buffer layer assembled of SnO_(2) nanoparticles(NPs)suppresses the QD-ETL exciton quenching and tunes charge balance while ZnO NPs provide high electron conductivity.As a result,the bottom-emitting QLED combining capped ZnO and SnO_(2) buffer exhibit a maximum luminance over 100,000 cd m^(−2) and a T95 operational lifetime averaging 6200 h at 1000 cd m^(−2) on the premise of entirely inhibiting positive aging.
基金
supported by the National Key Research and Development Program of China (Grant 2021YFB3601700)
the National Natural Science Foundation of China (Grant 62275183)
the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (19KJA550001)
Key Lab of Modern Optical Technologies of Education Ministry of China
Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province
Priority Academic Program Development (PAPD)of Jiangsu Higher Education Institutions
Jiangsu Shuangchuang Plan.
