无偏角4H-SiC同质外延温场分布系数的仿真及实验研究

Simulation and Experimental Study on Coefficient of Temperature Field Distribution for On-Axis 4H-SiC Homoepitaxial Growth

采用化学气相沉积(CVD)方法进行碳化硅(4H-SiC)同质外延生长,生长过程中温场分布是决定外延层质量的关键因素。对CVD系统的温场分布进行了仿真研究,并采用无偏角4H-SiC衬底进行同质外延生长实验验证。结果表明,无偏角4H-SiC外延层中的3C-SiC多型体夹杂与生长室温场分布密切相关。实验数据验证了仿真结果,两者的温度分布具有高度一致性,这也证明了仿真数据的有效性。

In the homoepitaxial growth of silicon carbide(4 H-SiC) by chemical vapor deposition(CVD), the distribution of its temperature field is crucial for the quality of the epitaxial layer. The CVD temperature field was simulated and experimentally verified using on-axis 4 H-SiC homogeneous epitaxy. It is found that the 3 C-SiC crystal polytype inclusions in the on-axis 4 H-SiC epitaxial layers are closely related to the temperature field distribution in the growth chamber. The results validate the simulation with a high degree of consistency in above two’s temperature distributions, which also verify the accuracy of the simulation data.