摘要
采用化学气相沉积(CVD)方法进行碳化硅(4H-SiC)同质外延生长,生长过程中温场分布是决定外延层质量的关键因素。对CVD系统的温场分布进行了仿真研究,并采用无偏角4H-SiC衬底进行同质外延生长实验验证。结果表明,无偏角4H-SiC外延层中的3C-SiC多型体夹杂与生长室温场分布密切相关。实验数据验证了仿真结果,两者的温度分布具有高度一致性,这也证明了仿真数据的有效性。
In the homoepitaxial growth of silicon carbide(4 H-SiC) by chemical vapor deposition(CVD), the distribution of its temperature field is crucial for the quality of the epitaxial layer. The CVD temperature field was simulated and experimentally verified using on-axis 4 H-SiC homogeneous epitaxy. It is found that the 3 C-SiC crystal polytype inclusions in the on-axis 4 H-SiC epitaxial layers are closely related to the temperature field distribution in the growth chamber. The results validate the simulation with a high degree of consistency in above two’s temperature distributions, which also verify the accuracy of the simulation data.
作者
汪久龙
赵思齐
李云凯
闫果果
申占伟
赵万顺
王雷
关敏
刘兴昉
孙国胜
曾一平
WANG Jiulong;ZHAO Siqi;LI Yunkai;YAN Guoguo;SHEN Zhanwei;ZHAO Wanshun;WANG Lei;GUAN Min;LIU Xingfang;SUN Guosheng;ZENG Yiping(Key Lab.of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,CHN;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,CHN;Beijing Key Lab.of Low Dimensional Semiconductor Materials and Devices,Beijing 100083,CHN)
出处
《半导体光电》
CAS
北大核心
2022年第5期909-913,共5页
Semiconductor Optoelectronics
基金
广东省重点研发计划项目(2021B0101300005)
国家自然科学基金项目(12175236,62104222,61804149)。
关键词
碳化硅
无偏角衬底
同质外延
温度场
SiC
on-axis substrate
homoepitaxial
temperature field