覆盖S+C波段的宽光谱带宽InGaAlAs/InP量子阱结构

Wide Optical Bandwidth InGaAlAs/InP Quantum-Well Structure Covering S+C Band

通过理论仿真和实际制备测试,分析比较了基于非对称量子阱结构(10 nm厚和6 nm厚的量子阱组合)的光放大芯片与对称量子阱结构(10 nm厚量子阱)的光放大芯片的性能。两种结构的理论模式增益同最终实测值符合较好。最终光谱测试结果显示,对称量子阱结构的光放大芯片存在基态增益饱和的现象,在大电流注入情况下,激态跃迁占据优势,从而造成光谱宽度急剧下降。而非对称量子阱结构的光放大芯片的光谱宽度随着注入电流的增加不断拓宽,在600 mA下实现199.7 nm光谱带宽,覆盖S+C波段。由此可见,非对称量子阱结构更有利于实现高功率、宽光谱的光放大芯片。

Through theoretical simulation and fabrication, the performance of optical amplification chip based on asymmetric quantum-wells(10 nm and 6 nm mixed quantum-wells)and symmetric quantum-wells(10 nm quantum-wells) was analyzed and compared. The theoretical mode gains of the two structures were in good agreement with the measured results. The final spectral test results show that the fundamental state gain saturation exists in the symmetric quantum-wells optical amplification chip. The excited state transition dominates in the case of large current injection, resulting in a sharp decrease in the spectral bandwidth. With the increase of injection current, spectral width of asymmetric quantum-wells optical amplification chip is widened constantly. The optical bandwidth of 199.7 nm is achieved at 600 mA, covering the S+C bands. Therefore, the asymmetric quantum well structure is more conducive to the realization of high power and wide spectrum optical amplification chip.