摘要
Lead chalcogenide colloidal quantum dots(CQDs)are regarded as attractive absorption materials for novel solar cells(SCs).The cost of lead chalcogenide CQD has been decreased to a commercialization target of$5/g due to the direct production of CQD inks.However,the photoelectric conversion efficiency(PCE)of lead chalcogenide CQDSCs is presently close to 14%,well below the commercialization target(20%),which is only 41%of the theoretical Shockley-Queisser limit efficiency.In this study,the different losses of open-circuit voltage(V_(oc)),fill factor(FF),and short circuit current density(J_(sc))for current CQDSCs are systematically discussed,as well as the percentage and likely causes of each loss.Then the primary reasons for the CQDSCs’performance constraints are highlighted.Following that,we focus on the CQDSCs interfaces(i.e.,CQD/CQD,CQD/HTL,and ETL/CQD)and explore viable ways to reduce device performance loss.Finally,based on the discussion above,we propose many enhancements to significantly solve numerous major obstacles impeding device performance to boost the PCE of CQDSCs for future commercialization significantly.
基金
supported by the Japan Science and Technology Agency(JST)Mirai program(JPMJMI17EA)
MEXT KAKENHI(Grant Nos.26286013,and 17H02736)。
