摘要
在微波技术研究中 ,微波功率是表征微波信号特性的一个重要参数。微波功率测量已成为电磁测量的重要部分 ,可应用于很多场合 ,如发射机输出功率 (包括天线系统辐射的功率 )和振荡器输出功率的测量、毫瓦计的校准、标准信号发生器的校准等。微波功率传感器是微波功率计探头中的核心元件。微梁结构热偶微波功率传感器芯片选择具有低电阻温度系数的Ta2 N和高热电功率塞贝克系数的Si作为热偶材料 ,利用半导体工艺和MEMS工艺制作 ,并最终研制成合格的芯片。芯片具有尺寸小、功耗低、灵敏度高、频带宽等特点。简要介绍了芯片的结构原理 ,并详细介绍了芯片的制作工艺。
In the research of microwave technology, microwave power is an important parameter which tokens the characteristic of microwave signal.Microwave power measurements have taken an important role in electromagnetics,it can be used in many cases, for example,it can be used to measure output of transmitter(includes power of antenna system)and monofier,and to adjust milliwatt power meter and standard signal generator,etc.Microwave power sensor is the core component of microwave power meter.In the chip of microbridge structure thermocouple type microwave power sensor,Ta_2N of relatively low resistor-temperature coefficient and Si of relatively high thermoelectric power Seebeck coefficient are used as thermocouple materials,and the chip is fabricated by using semiconductor technics and MEMS technics,it has many advantages such as small geometry,low power dissipation,high sensitivity and wide frequency band.Structure and principle of chip were recommended,and its fabrication was recommended.
出处
《传感器技术》
CSCD
北大核心
2002年第11期31-33,共3页
Journal of Transducer Technology