与硅基CMOS兼容且具有超高响应率和比探测率的二维二硒化铂自驱动光电探测器

Si-CMOS-compatible 2D PtSe2-based self-driven photodetector with ultrahigh responsivity and specific detectivity

因二维材料的独特性质及其可调谐的光谱响应,基于二维材料的光电探测器受到广泛关注.然而,它们的性能还不够突出,其制造工艺与硅基互补金属氧化物半导体技术工艺流程的兼容性还需要评估.在本文中,我们报道了一种基于二硒化铂/超薄二氧化硅/硅异质结构的高性能、空气稳定、自驱动、室温宽带光电探测器.该光电探测器表现出超高的响应度(8.06 AW-1)和比探测率(4.78×10^(13)cm Hz^(1/2)W^(-1))、极低的暗电流(0.12 pA)以及优秀的开关比(1.29×10^(9)).在375,532,1342和1550 nm波长处所测的光电流响应度分别为2.12,5.56,18.12和0.65 m AW^(-1).此外,制造的9×9器件阵列不仅展示了该探测器非常好的均匀性和可重复性,而且还显示了其在紫外-可见-近红外照明成像应用领域的潜力.我们设计的二硒化铂/超薄二氧化硅/硅异质结光电探测器极大地抑制了暗电流,提高了二极管的理想因子并增加了界面势垒.因此,它为改善光电探测器性能的设计提供了一种新策略.

Photodetectors(PDs)based on two-dimensional(2D)materials are attracting considerable research interest due to the unique properties of 2D materials and their tunable spectral response.However,their performance is not outstanding enough,and the compatibility of their fabrication process with Si-complementary metal oxide semiconductor(CMOS)process flow needs evaluation.Here,we report an unprecedented high-performance,air-stable,self-driven,and broadband room-temperature PD based on the architecture of the PtSe2/ultrathin SiO2/Si heterojunction.The PD exhibits a very prominent responsivity of 8.06 A W^(-1),a truly high specific detectivity of 4.78×1013cm Hz^(1/2)W^(-1),an extremely low dark current of 0.12 pA,and a fantastic photocurrent/dark current ratio of 1.29×10~9 at zero bias.The measured photocurrent responsivities at wavelengths of 375,532,1342,and1550 nm are 2.12,5.56,18.12,and 0.65 mA W^(-1),respectively.Moreover,the fabricated 9×9 device array not only illustrates the very high uniformity and reproducibility of the PDs but also shows great potential in the field of ultraviolet-visiblenear infrared illumination imaging applications with a fabrication fully compatible with Si-CMOS technologies.Our design of the PtSe2/ultrathin SiO2/Si heterojunction PD greatly suppresses dark current,improves the diode ideality factor,and increases the potential barrier.Accordingly,it paves the way for a general strategy to enhance the performance of PDs used in novel optoelectronic applications.