基于双栅长GaN集成工艺的Ku波段收发芯片

Ku-band T/R Chip Based on Two-gate-type GaN Integrated Process

研制了一款Ku波段GaN收发多功能芯片。芯片集成了接收通道的低噪声放大器和发射通道的功率放大器,使用单刀双掷开关实现通道间切换。该芯片采用两种不同栅长集成的GaN HEMT工艺。低噪声放大器使用0.10μm低压低噪声工艺,功率放大器和开关使用0.15μm高压高功率工艺。低噪声放大器采用电流复用结构以降低功耗,功率放大器采用三级电抗式匹配网络以提高芯片输出功率。测试结果表明,在14~18 GHz频带内,发射通道线性增益≥30 dB,饱和输出功率≥40.5 dBm,功率附加效率典型值为23%;接收通道线性增益为24 dB(±0.2 dB),噪声系数典型值为2.3 dB,功耗仅为140 mW(5 V/28 mA)。芯片面积为4.0 mm×3.0 mm。

A Ku-band GaN transceiver multifunction chip was developed.The low noise amplifier of the receiving channel and the power amplifier of the transmitting channel were integrated on the chip,and single pole double throw switches were used for switching modes.GaN HEMT process with different gate lengths was used for the chip.A 0.10μm low-voltage and low-noise process was used for low-noise amplifiers,and 0.15μm high-voltage high-power process was used for power amplifiers and switches.Current reusing structure was used for low-noise amplifier to reduce power consumption,and three-stage reactance-matching network was used for the power amplifier to increase the chip output power.The measured results show that in the 14-18 GHz frequency band,the linear gain of the transmitting channel is more than 30 dB,the saturated output power is more than40.5 dBm,and the typical power additional efficiency is 23%;The receiving channel has a linear gain of 24 dB(±0.2 dB),a typical noise figure of 2.3 dB,and a power consumption of merely 140 mW(5 V/28 mA).The chip occupies an area of 4.0 mm×3.0 mm.