新型锗源环栅线隧穿晶体管结构设计及优化

Design and Optimization of the Novel Gate-all-around Line Tunneling FETs with Germanium Source

设计了一种锗源环栅线隧穿晶体管(GAA-LTFET),并采用TCAD工具对其工作原理进行了分析,通过双栅功函数技术抑制寄生点隧穿机制,消除了转移电流曲线上的驼峰现象,提高器件特性。此外,还针对源区掺杂浓度和沟道厚度等关键参数进行了分析和优化,最终器件平均亚阈值摆幅可达33.4 mV/dec,开态电流可达0.64μA/μm,开关比值约为9×10^(8),该器件的优异特性有望促进后摩尔时代超低功耗技术的发展。

A gate-all-around line tunneling field-effect-transistor(GAA-LTFET)with germanium-source was proposed and the working principle was analyzed by the aid of the TCAD tools in detail.The parasitic point tunneling mechanism was suppressed by the dual gate work function technique,which eliminated the current hump on the transfer curve and improved the device characteristics.In addition,the influence of the source doping concentration and the channel thickness are also analyzed and optimized.About 33.4 mV/dec of the average subthreshold swing,0.64μA/μm of the onstate current and about 9×10^(8)of the on/off state ratio are obtained.The excellent characteristics of the proposed novel devices are expected to promote the further development of the ultra-low power applications in the post Moore era.