用于5G移动终端N77频段的低噪声放大器设计

Design of N77 Band Low Noise Amplifier for 5G Mobile Terminal Application

设计了一款用于5G移动通信N77频段(3.3~4.2 GHz)的低噪声放大器。该低噪声放大器采用65 nm绝缘体上硅(Silicon on insulator,SOI)工艺实现。电路结构中采用放大通路切换、反馈切换等多种模式相结合的方式实现了6档增益可调,相比于仅使用放大器串联衰减器的方式,可以实现功耗、增益、线性度等性能的最优组合。低噪声放大器工作电压为1.2 V,芯片尺寸为0.84 mm×0.84 mm,增益范围覆盖-11~20 dB,芯片的工作状态采用移动产业处理器接口控制,在最高增益档时噪声系数在0.90~1.05 dB之间,单通道工作时功耗最大为15.6 mW。

A low noise amplifier(LNA)used in N77 band(3.3-4.2 GHz)for 5G mobile terminal application was designed in this paper.65 nm SOI technology was adopted in the LNA design,and a combination of switchable amplifier path,feedback inductors,output matching capacitors,and attenuators was used to achieve variable gain with 6 steps.Compared with only using amplifier in series attenuator,it can get a better trade-off point among power consumption,gain,linearity and other performance.The low noise amplifier is operated under 1.2 V,and the chip size is 0.84 mm×0.84 mm.The gain rang is from-11 dB to 20 dB.The state is controlled by MIPI interface.The noise figure is between 0.9 to 1.05 dB at the highest gain mode.Besides the maximum power consumption of single channel is below 15.6 mW.