超薄硅双面抛光片加工效率的提升

Improvement of Production Efficiency for Ultra-thin Double Side Polished Wafers

用于5G通信芯片支撑层的超薄硅双面抛光片的生产是一个需要攻克的难题。该产品的技术难点在于,硅片厚度低至100μm,薄如纸张,采用传统粘蜡抛光工艺,加工效率极低且碎片率极高,同时硅片几何参数无法保证,成品率较低。由于磨削工艺可有效减少硅片表面的损伤层、改善几何参数,所以针对超薄硅片的加工,采用贴膜抛光工艺可以保证抛光的效率和成品率。在硅片腐蚀后采用磨削+贴膜抛光的工艺,解决了超薄硅双抛片加工效率低、碎片率高、几何参数难以保证、成品率低的问题。

The production of ultra-thin double side polished wafers which are used for the support layers of 5G communications chips is a challenge. The technical difficulty is that the silicon wafer thickness is only about 100 μm, as thin as papers. Using the traditional wax polishing method, the processing efficiency, the fragmentation rate and the geometric parameters of wafers are unacceptable. As the grinding process can effectively reduce the surface damage layer and improve the geometric parameters, and using pasting-film polishing method, the polishing efficiency can be ensured. Therefore, the combine of grinding and pastingfilm polishing can enhance the processing efficiency, decrease the fragmentation rate, improve the geometric parameters of the ultra-thin double side polished wafers.