摘要
将β-Ga_(2)O_(3)与高导热SiC衬底异质集成可以有效解决氧化镓高功率电子器件的散热问题.本文通过高温亲水性键合结合离子束剥离技术,将2英寸的高质量(201)β-Ga_(2)O_(3)单晶薄膜转移到了4H-SiC衬底上.为理解离子束剥离β-Ga_(2)O_(3)薄膜的物理机制,我们系统地研究了注氢β-Ga_(2)O_(3)表面起泡的演变过程及该过程中气泡内部的压力变化.采用有限元模拟预测合适的键合温度,通过将β-Ga_(2)O_(3)和4H-SiC晶圆在96℃的温度下进行高温亲水性键合,有效降低了离子束剥离过程中异质界面上的热应力,防止β-Ga_(2)O_(3)/4H-SiC键合对的解键合以实现薄膜的转移.X射线衍射结果表明,转移的β-Ga_(2)O_(3)薄膜具有窄的衍射峰半高宽,为79.2 arcsec.对薄膜进行化学机械抛光后,获得了极光滑的表面,均方根粗糙度仅0.1 nm.采用高温亲水性键合结合离子束剥离技术制备的β-Ga_(2)O_(3)/4H-SiC异质集成材料将成为开发高性能β-Ga_(2)O_(3)功率器件提供实用平台.
Heterogeneous integration of β-Ga_(2)O_(3) on a highly thermal conductive SiC substrate is an efficient solution to solve its bottleneck of thermal dissipation for high-power electronics.In this work,a 2-inch high-quality(201) β-Ga_(2)O_(3) single-crystalline film was transferred to the 4H-SiC substrate via the ion-cutting technique with hydrophilic bonding at elevated temperatures.The evolution process of the surface blistering on the hydrogen-implanted β-Ga_(2)O_(3) together with the internal pressure in blisters were investigated systematically to understand the physical mechanisms of the ion-cutting of β-Ga_(2)O_(3) thin film.As suggested by the finite element simulation,the hydrophilic bonding was carried out at an elevated bonding temperature of 96℃to prevent the debonding of β-Ga_(2)O_(3)/4H-SiC during the ion-cutting process via reducing the thermal stress.The astransferred β-Ga_(2)O_(3) thin film exhibited a narrow full width at half maximum of the X-ray diffraction of 79.2 arcsec,and an extremely smooth surface with a root-mean-square roughness of 0.1 nm was achieved after chemical mechanical polishing.It is expected that the β-Ga_(2)O_(3)/4H-SiC heterogeneous integration material obtained by the ion-cutting technique with hydrophilic bonding at elevated temperatures will serve as a practical platform for high-performance β-Ga_(2)O_(3) power devices.
作者
沈正皓
徐文慧
陈阳
林家杰
谢玉环
黄凯
游天桂
韩根全
欧欣
Zhenghao Shen;Wenhui Xu;Yang Chen;Jiajie Lin;Yuhuan Xie;Kai Huang;Tiangui You;Genquan Han;Xin Ou(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;College of Information Science and Engineering,Jiaxing University,Jiaxing 314001,China;The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi’an 710071,China)
基金
supported by the National Natural Science Foundation of China(61874128 and 62174167)
the Frontier Science Key Program of CAS(QYZDY-SSW-JSC032 and ZDBS-LY-JSC009)
the Program of Shanghai Academic Research Leader(19XD1404600)
K.C.Wong Education Foundation(GJTD-2019-11)
the Key Research Project of Zhejiang Laboratory(2021MD0AC01)。
