基于GaInAs/AlInAs中红外量子级联激光器的自洽电子子带能级结构研究

Study on Self-Consistent Electronic Subband Structure of GaInAs/AlInAs-Based Mid-Infrared Quantum Cascade Laser

中红外(Mid-infrared,MIR)量子级联激光器(Quantum Cascade Laser,QCL)已被广泛应用于定向红外对抗、自由空间光通信、痕量气体传感等重要领域。利用Nextnano++软件进一步完善了自洽计算基于MIR QCL器件的薛定谔方程和泊松方程的理论方法。针对InP衬底上生长的GaInAs/AlInAs多量子阱MIR QCL器件,研究了四能级双声子共振QCL结构中有源区的电子子带能级结构,并对这些子带能级随器件工作温度、驱动电场、注入区掺杂浓度等变化的规律进行了系统研究,获得了与实验结果一致的理论结果。此工作为MIR QCL器件的生长和制备提供了理论设计和研究方法,为了解器件工作条件提供了理论预期,也为进一步提高MIR QCL的发光功率和效率提供了理论研究支撑。

The mid-infrared(MIR)quantum cascade lasers(QCLs)have been widely applied in the fields such as directional infrared countermeasure,free-space optical communication,trace gas sensing,and other important fields.We further improve the theoretical approach for self-consistent solution of the Schr9dinger equation and the Poisson equation based on the MIR QCL device using the Nextnano++software.We calculate the electronic subband structure in the active region of the four-level and double-phonon resonant QCL structure for GaInAs/AlInAs multi-quantum well-based MIR QCL devices grown on InP substrate.The dependence of these subband energies upon device operating temperature,driving electric field,and doping concentration in the injection region are studied.Theoretical findings are in line with the experimental results.This work provides theoretical design and research methods for the growth and preparation of MIR QCL devices,provides theoretical expectations for understanding the working conditions of devices,and provides theoretical research support for further improving the luminescence power and efficiency of MIR QCL.