^(14)C大面积平面源的研制

Preparation of Large Size^(14)C Planar Source

为了解铝阳极氧化膜的吸附性能对制备^(14)C大面积平面源的影响,研究不同厚度(4~12μm)的铝氧化膜对^(14)C的吸附效率,吸附槽中溶液的量对^(14)C的吸附效率、平面源均匀性的影响,以及^(14)C溶液比活度对吸附率的影响,并对研制的^(14)C平面源进行均匀性、牢固性检测,以及发射率定值。结果显示,研制的^(14)C平面源(100 mm×150 mm)均匀性<10%,牢固性<0.01%;使用2πα、2πβ表面发射率标准装置测量^(14)C平面源,坪区达到400 V,每100 V坪斜为0.3%,小能量损失修正因子为0.2%;测量不确定度为2%(k=2)。研制的^(14)C平面源技术参数满足相关平准源标准的要求。

The purpose of the work is to research the planar source of^(14)C with large size by the absorbability of the anodizing membrane.The adsorption of^(14)C on the anodizing membrane with thickness of 4 to 12μm were investigated.The adsorption of^(14)C and the uniformity of the planar source were investigated on the volume of^(14)C solution.The specific activity of^(14)C was investigated on adsorption of^(14)C.The fastness,the uniformity and the surface emission rate of the planar source of^(14)C were measured.The result shows that the uniformity of the planar source(100 mm×150 mm)of^(14)C is precede 10%.The plateau length is 400 V,the slope of the plateau is 0.3%per 100 V.The threshold correction is 0.2%.The uncertainty of^(14)C source measurement is 2%(k=2).The technical parameters of the developed plane source^(14)C can meet the requirements of relevant standards.