一种碳化硅器件的测试技术研究

Research on Testing Technology of a Silicon Carbide Device

鉴于碳化硅材料在集成电路领域的巨大优势,为进一步提高电路研发生产水平,形成高效而完善的器件测试流程,以某款碳化硅器件为测试对象,为其专门设计一套测试方法。方法基于对碳化硅材料的特性与工作原理的分析,合理选取测试条件与测试设备,并实际进行测试,获得击穿电压、正向电流、结电容等参数的详细数据。测试结果表明,方法能够准确把握该类碳化硅产品的关键参数指标,符合行业标准,具有一定的实用价值。

In view of the great advantages of silicon carbide materials in the field of IC, in order to further improve the level of circuit R&D and production and form an efficient and perfect device testing process, a set of testing methods is specially designed for a certain silicon carbide device as the test object. The method is based on the analysis of the characteristics and working principle of silicon carbide materials, and the test conditions and equipment are reasonably selected, and the detailed data of breakdown voltage, forward current, junction capacitance and other parameters are obtained. The test results show that the method can accurately grasp the key parameters of that kind of silicon carbide products, which meets the industry standards and has certain practical value.