不同阳极靶材上GaN半导体材料的XPS分析

XPS Analysis of Semiconductor GaN with Different Anodes

在X射线光电子能谱(XPS)分析表征样品时,经常会出现俄歇峰与其他元素特征峰干扰的现象,影响谱峰的拟合与分析。本文以GaN半导体材料为例,分别采用单色Al靶、单色Ag靶、双阳极Mg靶作为X射线源进行表征,得到GaN材料中各元素精细谱,分析发现常用的Mg靶和Al靶为X射线源时,Ga LMM俄歇峰与N 1s峰互相重叠的问题,影响了N 1s能谱的准确解析,而高能Ag靶为X射线源时,上述二峰完全分离,有利于N 1s的谱峰的准确分析。

The auger peaks are always overlapped with characteristic peaks of other elements in XPS analysis,which will affect the analysis of characteristic peaks.In this work,GaN semiconductor material was taken as an example.The monochromatic Al anode,monochromatic Ag anode and non-monochromatic Mg anode were respectively used as X-ray sources for XPS analysis.Different separation of Ga LMM and N 1s spectra results were obtained with three anode materials.The Ga LMM was overlapped with N 1s on Mg and Al anode,while it was completely separated on Ag anode,leading to the easy analysis of N 1s.